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Diffraction | Physics - Wyatt's Notes

X-ray diffraction from crystal planes produces constructive interference when:

2dsinθ=nλ2d\sin\theta = n\lambda

Where dd is the interplanar spacing, θ\theta is the angle of incidence, and nn is the order.

Derivation. The path difference between waves scattered from adjacent planes is 2dsinθ2d\sin\theta. Constructive interference requires this to be an integer multiple of λ\lambda. \blacksquare

For the nn-th order reflection from (hkl)(hkl) planes, one can equivalently define it as the first-order Reflection from (nh nk nl)(nh\ nk\ nl) planes with spacing d/nd/n.

Diffraction occurs when the scattering vector equals a reciprocal lattice vector:

Δk=kk=G\Delta\mathbf{k} = \mathbf{k}' - \mathbf{k} = \mathbf{G}

This is equivalent to Bragg’s law. Since k=k\lvert\mathbf{k}\rvert = \lvert\mathbf{k}'\rvert (elastic Scattering), the Laue condition requires k\mathbf{k} to terminate on the Ewald sphere (a sphere Of radius kk centred at the tip of k\mathbf{k}).

Equivalence with Bragg’s law. From k=k+G\lvert\mathbf{k}\rvert = \lvert\mathbf{k} + \mathbf{G}\rvert:

k2=k+G2=k2+G2+2kGk^2 = \lvert\mathbf{k} + \mathbf{G}\rvert^2 = k^2 + G^2 + 2\mathbf{k}\cdot\mathbf{G}

    kG=G22\implies \mathbf{k}\cdot\mathbf{G} = -\frac{G^2}{2}

Since G=2π/dG = 2\pi/d and kG^=ksinθ\lvert\mathbf{k}\cdot\hat{\mathbf{G}}\rvert = k\sin\theta:

ksinθ=G2=πdk\sin\theta = \frac{G}{2} = \frac{\pi}{d}

Using k=2π/λk = 2\pi/\lambda: 2dsinθ=λ2d\sin\theta = \lambda (first order). \blacksquare

The structure factor determines the intensity of diffraction from planes (hkl)(hkl):

Shkl=jfjeiGhkldjS_{hkl} = \sum_j f_j e^{-i\mathbf{G}_{hkl}\cdot\mathbf{d}_j}

Where fjf_j is the atomic form factor of atom jj at position dj\mathbf{d}_j in the basis.

Example: BCC. Two atoms at (0,0,0)(0,0,0) and (a/2,a/2,a/2)(a/2, a/2, a/2) in the conventional cell:

Shkl=f[1+eiπ(h+k+l)]=f[1+(1)h+k+l]S_{hkl} = f\left[1 + e^{-i\pi(h+k+l)}\right] = f\left[1 + (-1)^{h+k+l}\right]

Reflections are present only when h+k+lh + k + l is even. When h+k+lh + k + l is odd, Shkl=0S_{hkl} = 0 (systematic absence).

Example: FCC. Atoms at (0,0,0)(0,0,0), (a/2,a/2,0)(a/2,a/2,0), (a/2,0,a/2)(a/2,0,a/2), (0,a/2,a/2)(0,a/2,a/2):

Shkl=f[1+eiπ(h+k)+eiπ(h+l)+eiπ(k+l)]S_{hkl} = f\left[1 + e^{-i\pi(h+k)} + e^{-i\pi(h+l)} + e^{-i\pi(k+l)}\right]

Reflections present only when h,k,lh, k, l are all even or all odd.

3.4 Worked Examples: Structure Factor Calculations

Section titled “3.4 Worked Examples: Structure Factor Calculations”
Worked Example: Diamond Cubic Structure Factor

Diamond has an FCC lattice with a two-atom basis at (0,0,0)(0,0,0) and (a/4,a/4,a/4)(a/4, a/4, a/4). The FCC Sublattice factor SFCCS_{\mathrm{FCC}} is nonzero only when h,k,lh,k,l are all even or all odd.

The full structure factor is:

Shkl=SFCC[1+eiπ2(h+k+l)]S_{hkl} = S_{\mathrm{FCC} \cdot \left[1 + e^{-i\frac{\pi}{2}(h+k+l)}\right]}

For allowed FCC reflections:

  • h+k+l=4nh + k + l = 4n: S=4f(1+1)=8fS = 4f(1 + 1) = 8f. Intensity 64f2\propto 64f^2.
  • h+k+l=4n+2h + k + l = 4n + 2: S=4f(1+eiπ)=4f(11)=0S = 4f(1 + e^{-i\pi}) = 4f(1 - 1) = 0. Systematic absence.
  • h+k+l=2n+1h + k + l = 2n + 1 (odd): S=4f(1±i)S = 4f(1 \pm i). Intensity 4f(1±i)2=32f2\propto \lvert 4f(1 \pm i)\rvert^2 = 32f^2.

The extra absence at h+k+l=4n+2h + k + l = 4n + 2 is the signature of the diamond structure, distinguishing It from a simple FCC lattice.

Worked Example: HCP Structure Factor

HCP has a two-atom basis at (0,0,0)(0,0,0) and (2/3,1/3,1/2)(2/3, 1/3, 1/2) in fractional coordinates of the Hexagonal lattice.

The structure factor is:

Shkl=f[1+e2πi(h/3+k/3+l/2)]=f[1+e2πi(2h+k)/3eiπl]S_{hkl} = f\left[1 + e^{2\pi i(h/3 + k/3 + l/2)}\right] = f\left[1 + e^{2\pi i(2h+k)/3}\,e^{i\pi l}\right]

For ll even: eiπl=1e^{i\pi l} = 1 So S=f[1+e2πi(2h+k)/3]S = f[1 + e^{2\pi i(2h+k)/3}]. For ll odd: eiπl=1e^{i\pi l} = -1 So S=f[1e2πi(2h+k)/3]S = f[1 - e^{2\pi i(2h+k)/3}].

When 2h+k=3n2h + k = 3n: S=2fS = 2f (strong) for even ll And S=0S = 0 (absent) for odd ll. When 2h+k=3n±12h + k = 3n \pm 1: both even and odd ll give reflections but with different intensities.

Systematic absences arise from lattice centring and glide planes/screw axes, and are summarised by The structure factor:

StructureCondition for reflectionSystematic absence
SCAll (hkl)(hkl)None
BCCh+k+lh + k + l evenh+k+lh + k + l odd
FCCh,k,lh,k,l all even or all oddMixed even/odd
Diamondh,k,lh,k,l all even/odd, h+k+l4n+2h+k+l \neq 4n+2h+k+l=4n+2h+k+l = 4n+2 (and mixed)
HCPll even when 2h+k=3n2h+k=3nll odd when 2h+k=3n2h+k=3n

Systematic absences allow unambiguous identification of the Bravais lattice from a diffraction pattern. The presence of a (100)(100) reflection rules out BCC; the presence of (200)(200) but absence of (110)(110) Identifies FCC.

In a powder diffraction experiment, a polycrystalline sample with randomly oriented crystallites Is illuminated by a monochromatic X-ray beam. Each family of planes (hkl)(hkl) that satisfies Bragg’s Law produces a diffraction cone at angle 2θ2\theta from the incident beam.

The Bragg—Brentano geometry uses a divergent beam and a focusing detector, recording intensity As a function of 2θ2\theta. Each peak position gives dhkld_{hkl} via Bragg’s law, and the peak Intensity is proportional to Shkl2\lvert S_{hkl}\rvert^2 times multiplicity and geometric factors.

Scherrer equation. For crystallites of size LLThe diffraction peaks are broadened. The Full width at half maximum (FWHM) β\beta (in radians) relates to the crystallite size by:

L=KλβcosθL = \frac{K\lambda}{\beta\cos\theta}

Where K0.89K \approx 0.89 is the Scherrer constant. This provides a straightforward method for Estimating nanocrystallite sizes from powder diffraction data.

Mistake 1: Confusing the angle in Bragg’s law with the angle of incidence. In Bragg’s law 2dsinθ=nλ2d\sin\theta = n\lambda, θ\theta is the angle between the incident beam and the crystal plane, not the angle between the beam and the normal to the plane. Do not confuse the two; they differ by 9090^\circ.

Mistake 2: Assuming that all planes produce diffraction peaks. Not all crystal planes produce diffraction peaks; some may have zero structure factor due to destructive interference. For example, in BCC crystals, planes with h+k+lh + k + l odd have zero structure factor. Do not assume that every plane will produce a peak.

Mistake 3: Forgetting that X-ray diffraction requires coherent scattering. X-ray diffraction requires coherent elastic scattering from the crystal lattice. Inelastic scattering (Compton scattering) does not contribute to diffraction peaks. Do not assume that all scattered X-rays contribute to diffraction.

Mistake 4: Confusing the Ewald sphere with the Brillouin zone. The Ewald sphere is a sphere in reciprocal space with radius k=2π/λk = 2\pi/\lambda, while the Brillouin zone is the Wigner-Seitz cell of the reciprocal lattice. Diffraction occurs when the Ewald sphere intersects a reciprocal lattice point. Do not confuse the two concepts.

Mistake 5: Assuming that powder diffraction gives single-crystal information. Powder diffraction averages over all orientations of crystallites, producing rings rather than spots. Single-crystal diffraction gives more detailed information about the crystal structure. Do not assume that powder diffraction gives the same information as single-crystal diffraction.

flowchart TD
A[3_Diffraction] --> B[Key Concepts]
A --> C[Core Principles]
A --> D[Practical Applications]
B --> E[Fundamental definitions]
C --> F[Design patterns]
D --> G[Real-world usage]

Diffraction occurs when waves encounter obstacles or periodic structures comparable to their wavelength. In crystals, atoms arranged in regular lattices act as diffraction gratings for X-rays, producing sharp spots whose pattern reveals the crystal structure. Bragg’s law relates the diffraction angle to the atomic spacing, providing a ruler for measuring crystal lattices. The reciprocal lattice is a mathematical construction that simplifies diffraction calculations: each real-space lattice has a dual in momentum space, and diffraction peaks occur at reciprocal lattice vectors. This technique is how we determine the atomic arrangement of materials from proteins to semiconductors.